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Fabrication of High-Performance LDDFETs With Oxide Sidewall-Spacer Technology by r4kp55bv5k is a document available to read on EtoBox.
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The document describes a fabrication process for Lightly Doped Drain/Source Field-Effect Transistors (LDDFETs) using oxide sidewall-spacer technology, which enhances control over device characteristics without requiring additional photomasking steps. The process shows a significant performance advantage, with LDDFETs demonstrating up to 1.9 times the performance of conventional devices. Additionally, the paper discusses the controllability and reproducibility of the fabrication process, highlighting the imp
- Author
- r4kp55bv5k
- Language
- EN