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About this Physics and Astronomy article
Characterization of the interface between Ge+-implanted crystalline silicon and its thermally grown oxide by spectroscopic ellipsometry by Nguyen, N. V.; Vedam, K.; Narayan, J. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Nguyen, N. V.; Vedam, K.; Narayan, J.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1990
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)