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A 3-KV GaN MISHEMT With High Reliability and A Power Figure-Of-Merit of 685 MW CM by Dr.J.Kavitha is a document available to read on EtoBox.
This document presents the development of a 3-kV GaN MISHEMT with a high power figure-of-merit of 685 MW/cm², utilizing a 90-nm in situ SiNX layer for gate dielectric and surface passivation. The devices exhibit low leakage currents, high breakdown voltages, and promising reliability, with a projected 10-year lifetime under specific conditions. The findings suggest a viable strategy for mass production of high-performance GaN-on-Si MISHEMTs suitable for power applications.
- Author
- Dr.J.Kavitha
- Language
- EN