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About this Engineering article
In situ transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si p–n junctions by Ross, F. M. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ross, F. M.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 1992
- Language
- EN
- Field
- Engineering (Physical Sciences)