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About this Engineering article
An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature by Wei Lee, ; Pin Su, ; Hou-Yu Chen, ; Chang-Yun Chang, ; Ke-Wei Su, ; Liu, S.; Fu-Liang Yang, is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wei Lee, ; Pin Su, ; Hou-Yu Chen, ; Chang-Yun Chang, ; Ke-Wei Su, ; Liu, S.; Fu-Liang Yang,
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2006
- Field
- Engineering (Physical Sciences)