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About this Engineering article
Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition by Zhao, G. Y.; Adachi, M.; Ishikawa, H.; Egawa, T.; Umeno, M.; Jimbo, T. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Zhao, G. Y.; Adachi, M.; Ishikawa, H.; Egawa, T.; Umeno, M.; Jimbo, T.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)