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Microwave dielectric properties of the BaTi5O11 thin film grown on the poly-Si substrate using rf magnetron sputtering by Bo-Yun Jang; Young-Hun Jeong; Suk-Jin Lee; Sahn Nahm; Ho-Jung Sun; Woo-Sung Lee; Myong-Jae Yoo; Nam-Ki Kang; Hwack-Joo Lee is a Materials Science article available to read on EtoBox.

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BaTi 5 O 11 thin films were grown on the poly-Si/SiO 2 /Si substrate using rf magnetron sputtering. The BaO-TiO 2 thin film deposited on the poly-Si substrate had an amorphous phase even though the growth temperature was high at 550 • C. The amorphous film was crystallized into the BaTi 5 O 11 phase when the film was post annealed above 800 • C. The post annealing temperature is one of the most important factors for the formation of the crystalline BaTi 5 O 11 thin film. The homogeneous BaTi 5 O 11 thin film was obtained when the film was grown at 550 • C and rapid thermal annealed (RTA) at 900 • C for 3 min. The dielectric constant (ε r ) of the BaTi 5 O 11 film measured at 100 kHz was about 35 and the dissipation factors of all the films were smaller than 4.0%. The dielectric properties of the BaTi 5 O 11 thin film were also measured at microwave frequencies. For the BaTi 5 O 11 thin film grown at 550 • C and RTA at 900 • C for 3 min, the ε r of 34-30 and dielectric loss of 0.025 ± 0.005 were obtained at 1-6 GHz.

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Author

Bo-Yun Jang; Young-Hun Jeong; Suk-Jin Lee; Sahn Nahm; Ho-Jung Sun; Woo-Sung Lee; Myong-Jae Yoo; Nam-Ki Kang; Hwack-Joo Lee

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0955-2219)

Published

2006

Language

EN

Field

Materials Science (Physical Sciences)