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About this Engineering article
Dual-Material-Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs by Saxena, R.S.; Kumar, M.J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Saxena, R.S.; Kumar, M.J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)