About this scholarly article

Proceedings of IEEE International Electron Devices Meeting - Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions by Ono, M.; Saito, M.; Yoshitomi, T.; Fiegna, C.; Ohguro, T.; Iwai, H. is a scholarly article available to read on EtoBox.

Author

Ono, M.; Saito, M.; Yoshitomi, T.; Fiegna, C.; Ohguro, T.; Iwai, H.

Publisher

IEEE

Published

1993