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Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well by T.S Kim; J.Y Park; T.V Cuong; H.G Kim; H.J Lee; E.-K Suh; C.-H Hong is a Engineering article available to read on EtoBox.

What is Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well about?

Influence of antimony (Sb) as a surfactant and annealing on the structural and optical properties of InGaAsN/GaAs multiple quantum-well (MQW) grown by metalorganic chemical vapor deposition (MOCVD) is studied. It was found that an increase in compressive strain from an analysis of the satellite peaks in high-resolution X-ray diffraction was observed with increasing interruption time and annealing temperature. The photocurrent (PC) peak of as-grown MQW is blue-shifted with introduction time of excess Sb flux during growth interruption process. It seems to be due to the improvement of structure properties at interface by a surfactant suppressing surface diffusion phenomenon. After annealing process, the PC peak is blue-shifted with increasing annealing temperature for all samples. It seems to be related with the compressive strain and QW intermixing.

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Author

T.S Kim; J.Y Park; T.V Cuong; H.G Kim; H.J Lee; E.-K Suh; C.-H Hong

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2004

Language

EN

Field

Engineering (Physical Sciences)