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STM study of the charged defects on the Ge(111)-c(2×8) surface and the effect of density of states on defect-induced perturbation by Geunseop Lee; H. Mai; Ilya Chizhov; R.F. Willis is a Materials Science article available to read on EtoBox.
What is STM study of the charged defects on the Ge(111)-c(2×8) surface and the effect of density of states on defect-induced perturbation about?
## Ž . Ž . Defects present on the Ge 111 -c 2 = 8 surface and an effect of surface electronic states on the defect-induced Ž . perturbation have been studied by scanning tunneling microscopy STM . The defects exhibit voltage-dependent characteristics in the image. In particular, the empty-state images with low bias voltages exhibit delocalized brightness variation around the defects, suggesting that these defects are charged relative to the clean, unperturbed surface. The voltage-dependent but nonmonotonic amplitude of the delocalized brightness in the STM image is explained in relation to the surface Ž . Ž . electronic structure of Ge 111 -c 2 = 8 and the tunneling probabilities.
Who reads STM study of the charged defects on the Ge(111)-c(2×8) surface and the effect of density of states on defect-induced perturbation?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Geunseop Lee; H. Mai; Ilya Chizhov; R.F. Willis
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2000
- Language
- EN
- Field
- Materials Science (Physical Sciences)