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The article investigates the influence of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect transistors (Si-NWFETs). It highlights that differences in effective mass between the channel and source/drain regions lead to non-ideal contacts, significantly reducing drain current. The study finds optimal doping concentrations for maximizing drain current and minimizing threshold voltage, emphasizing the importance of doping in device performance

Author

Basudev Nag Chowdhury

Language

EN