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About this Engineering article
Selective epitaxial growth of GaInP by low-pressure metal-organic chemical-vapor deposition using ethyldimethylindium as In source by S. Chan; S. M. Sze; C. Chang; W. Lee is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S. Chan; S. M. Sze; C. Chang; W. Lee
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1994
- Language
- EN
- Field
- Engineering (Physical Sciences)