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About this Materials Science article
Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate by Phillips, T. A.; Macleod, T. C.; Ho, F. D. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Phillips, T. A.; Macleod, T. C.; Ho, F. D.
- Publisher
- Taylor and Francis Group; Informa UK (Taylor & Francis); Gordon and Breach Science Publishers; Informa UK Limited (ISSN 0015-0193)
- Published
- 2006
- Field
- Materials Science (Physical Sciences)
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