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About this Engineering article
Electron mobility in heavily doped silicon : H. K. Sy and C. K. Ong. Solid St. Commun.52 (10), 881 (1984) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 1985
- Language
- EN
- Field
- Engineering (Physical Sciences)