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About this Engineering article
SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition by Jamison, Paul C.; Tsunoda, Takaaki; Vo, Tuan Anh; Li, Juntao; Jagannathan, Hemanth; Shinde, Sanjay R.; Paruchuri, Vamsi K.; Gall, Daniel is a Engineering article available to read on EtoBox.
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- Author
- Jamison, Paul C.; Tsunoda, Takaaki; Vo, Tuan Anh; Li, Juntao; Jagannathan, Hemanth; Shinde, Sanjay R.; Paruchuri, Vamsi K.; Gall, Daniel
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2015
- Language
- EN
- Field
- Engineering (Physical Sciences)