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About this scholarly article
International Electron Devices Meeting. Technical Digest - Reliable tantalum gate fully-depleted-SOI MOSFETs with 0.15 μm gate length by low-temperature processing below 500°C by Ushikil, T.; Mo Chiun Yu, ; Hirano, Y.; Shimada, H.; Morita, M.; Ohmi, T. is a scholarly article available to read on EtoBox.
- Author
- Ushikil, T.; Mo Chiun Yu, ; Hirano, Y.; Shimada, H.; Morita, M.; Ohmi, T.
- Publisher
- IEEE
- Published
- 1996
- Language
- EN
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