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About this Engineering article
Selective etching of high-k HfO2 films over Si in hydrogen-added fluorocarbon (CF4∕Ar∕H2 and C4F8∕Ar∕H2) plasmas by Takahashi, Kazuo; Ono, Kouichi is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Takahashi, Kazuo; Ono, Kouichi
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 2006
- Field
- Engineering (Physical Sciences)