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What is HTIF127 PNP Transistor Datasheet about?

This document specifies the HTIF127 PNP epitaxial planar transistor. It provides: 1) Maximum ratings including storage temperature up to 150°C, junction temperature up to 150°C, and maximum power dissipation up to 45W. 2) Electrical characteristics including collector-base and collector-emitter breakdown voltages of -100V, collector current of -8A pulse and -5A continuous, and current gain typically between 100-10,000. 3) Dimensions of the TO-220FP plastic package with a minimum base thickness of 0.1098

Author

sonytin

Language

EN