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About this Engineering article
Modeling growth in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4 by F Hirose; H Sakamoto is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- F Hirose; H Sakamoto
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)
- Published
- 1998
- Language
- EN
- Field
- Engineering (Physical Sciences)