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Mg-Acceptor Activation Mechanism and Transport Characteristics in P-Type InGaN Grown by Metalorganic Vapor Phase Epitaxy by UchihaAnindya is a document available to read on EtoBox.

What is Mg-Acceptor Activation Mechanism and Transport Characteristics in P-Type InGaN Grown by Metalorganic Vapor Phase Epitaxy about?

The document investigates the Mg-acceptor activation mechanism and transport characteristics in Mg-doped InGaN layers grown by metalorganic vapor phase epitaxy. It finds that self-compensation occurs at higher Mg doping levels, affecting hole concentration and leading to the emergence of deep donors in photoluminescence spectra. The study highlights the potential of p-type InGaN for optical and electrical devices due to its favorable structural and electrical properties compared to Mg-doped GaN.

Author

UchihaAnindya

Language

EN