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About this Engineering article
Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs by Feng, M.; Scherrer, D.R.; Apostolakis, P.J.; Middleton, J.R.; McPartlin, M.J.; Lautenvasser, B.D.; Oliver, J.D. is a Engineering article available to read on EtoBox.
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- Author
- Feng, M.; Scherrer, D.R.; Apostolakis, P.J.; Middleton, J.R.; McPartlin, M.J.; Lautenvasser, B.D.; Oliver, J.D.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 1051-8207)
- Published
- 1995
- Language
- EN
- Field
- Engineering (Physical Sciences)