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What is High-Frequency Electron Mobility in GaN about?

This document summarizes a study of the complex mobility behavior of electrons in wurtzite and zincblende GaN subjected to both DC and AC electric fields in the terahertz range. The key findings are: 1) For the same DC and AC electric field intensities, the real and complex mobility components are stronger in zincblende GaN than in wurtzite GaN. 2) Both the real and imaginary components of complex mobility exhibit a pronounced peak around 3 terahertz. 3) The complex mobility behavior is similar to that

Author

Ewerton Caetano

Language

EN