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Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode by Hetal Patel; Kunjal Patel; Abhishek Patel; Hiren Jagani; K. D. Patel; G. K. Solanki; V. M. Pathak is a Engineering article available to read on EtoBox.

What is Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode about?

Tin selenide (SnSe), a member of the IV-VI group, belongs to the layered transition metal chalcogenide (TMC) family. As TMCs are chemically inert, and have a binary layered structure of Sn-X (X = S, Se, Te) type, they are used widely in the areas of photovoltaic, electronic, and optoelectronic devices. In the present study, a direct vapor transport technique was used to grow single crystals. The synthesized crystals were examined with energy-dispersive analysis of x-rays, optical microscopy-scanning electron microscopy, and x-ray diffraction techniques to investigate the purity, surface morphology, and phase, respectively. The present work reports the use of a layered monochalcogenide single-crystal substrate for preparation of metal-semiconductor or Schottky junction devices. The In/p-SnSe Schottky diode was prepared by a thermal evaporation method. Analysis for the In/p-SnSe Schottky contact is based on the measurement of the current-voltage characteristics of the Schottky diode within the temperature range (313 K < T < 413 K). Characteristics were analyzed using thermionic emission theory and Schottky barrier diode parameters including barrier height, ideality factor, and series

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Author

Hetal Patel; Kunjal Patel; Abhishek Patel; Hiren Jagani; K. D. Patel; G. K. Solanki; V. M. Pathak

Publisher

Springer Science and Business Media LLC

Published

2021

Language

EN

Field

Engineering (Physical Sciences)