Can I read Plasma/reactor Walls Interactions in Advanced Gate Etching Processes on EtoBox?

Plasma/reactor Walls Interactions in Advanced Gate Etching Processes by R. Ramos; G. Cunge; O. Joubert; N. Sadeghi; M. Mori; L. Vallier is a Engineering article available to read on EtoBox.

What is Plasma/reactor Walls Interactions in Advanced Gate Etching Processes about?

Wafer-to-wafer reproducibility is a major challenge in gate etching processes. Periodic dry cleaning of the reactor in F-based chemistry between wafers is the most common strategy to ensure process repeatability. However X-ray Photoelectron Spectroscopy analysis of the chamber walls show that this cleaning procedure leaves AlF x species on the reactor walls, eventually resulting in process drifts and formation of particles. We have thus investigated a new cleaning/conditioning strategy of plasma etching reactors, in which the chamber walls are coated by a carbon-rich film between each wafer, allowing stable processing conditions and highly anisotropic etching profile to be achieved in advanced gate stacks. Finally, we present a new method (based on the detection of Cl 2 by laser absorption) to characterize the reactor walls conditions that could prevent process drifts.

Who reads Plasma/reactor Walls Interactions in Advanced Gate Etching Processes?

Author

R. Ramos; G. Cunge; O. Joubert; N. Sadeghi; M. Mori; L. Vallier

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)