Opening book details…
About this Engineering article
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation by Zheng, Xiang; Feng, Shiwei; Peng, Chao; Lin, Gang; Bai, Lin; Li, Xuan; Yang, Ying; Pan, Shijie; Hu, Zhaoxu; Li, Xiaoyang; Zhang, Yamin is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Zheng, Xiang; Feng, Shiwei; Peng, Chao; Lin, Gang; Bai, Lin; Li, Xuan; Yang, Ying; Pan, Shijie; Hu, Zhaoxu; Li, Xiaoyang; Zhang, Yamin
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2019
- Field
- Engineering (Physical Sciences)