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Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers by Y.L. Tsai; J.R. Gong is a Engineering article available to read on EtoBox.

What is Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers about?

High temperature (HT)-GaN films inserted with low temperature (LT)-GaN interlayers were grown on (0 0 0 1) sapphire substrates by alternate supply of metal alkyls (trimethylgallium (TMG) and trimethylaluminum (TMA)) and ammonia (NH 3 ) in an inductively heated quartz reactor operated at atmospheric pressure. Based upon the results of scanning electron microscopic (SEM) observations, it was found that the mosaic structure in a thin HT-GaN film could be eliminated by using a LT-GaN interlayer. The HT-GaN film inserted with a LT-GaN interlayer having optimized thickness shows an enhanced room temperature (RT) photoluminescence (PL) intensity of the near band-edge emission by more than one order of magnitude compared with that of a HT-GaN film without any LT-GaN interlayer. The results of transmission electron microscopy (TEM) and double-crystal X-ray diffractometry (DCXRD) indicate that improvement in PL results is primarily due to the elimination of mosaic structure in the GaN film. Moreover, the insertion of LT-GaN interlayers in HT-GaN films was found to reduce the compressive strain in the HT-GaN films.

Who reads Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers?

It is typically read by researchers, students, and practitioners in Engineering.

Author
Y.L. Tsai; J.R. Gong
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
Published
2004
Language
EN
Field
Engineering (Physical Sciences)

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