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This article presents a novel approach for atomic layer deposition (ALD) of cobalt (Co) thin films using CoCl2(TMEDA) and Zn(DMP)2 as a reducing agent, resulting in Zn-free Co films with low resistivity. The study includes detailed analysis of the growth mechanism, including density functional theory (DFT) calculations, and demonstrates promising resistivity values of 15-20 μΩ cm for the deposited films. The findings suggest that this method could enhance the application of Co thin films in microelectronics

Author

meghamala.sarkar

Language

EN