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1.53 μm electroluminescence from ErF3-doped organic light-emitting diodes by Chuan Hui Cheng; Jin Wang; Zhi Jie Du; Shao Hua Shi; Zhao Qi Fan; Dong Feng Geng; Ren Sheng Shen; Ying Min Luo; Guo Tong Du is a Materials Science article available to read on EtoBox.
What is 1.53 μm electroluminescence from ErF3-doped organic light-emitting diodes about?
Near-infrared (NIR) organic light-emitting devices (OLEDs) are demonstrated by employing erbium fluoride (ErF 3 )-doped tris-(8-hydroxyquinoline) aluminum (Alq 3 ) as the emitting layer. The device structure is ITO/N,N 0 -di-1-naphthyl-N,N 0 -diphenylbenzidine (NPB)/Alq 3 : ErF 3 /2,2 0 ,2 00 -(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole) (TPBI)/Alq 3 /Al. Room-temperature electroluminescence around 1530 nm is observed due to the 4 I 13/2 -4 I 15/2 transition of Er 3 + . Full width at half maximum (FWHM) of the electroluminescent (EL) spectrum is $ 50 nm. NIR EL intensity from the ErF 3 -based device is $ 4 times higher than that of Er(DBM) 3 Phen-based device at the same current. Alq 3 -ErF 3 composite films are investigated by the measurements of X-ray diffraction (XRD), absorption, photoluminescence (PL) and PL decay time. Electron-only devices are also fabricated. The results indicate that energy transfer mechanism and charge trapping mechanism coexist in the NIR EL process.
Who reads 1.53 μm electroluminescence from ErF3-doped organic light-emitting diodes?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Chuan Hui Cheng; Jin Wang; Zhi Jie Du; Shao Hua Shi; Zhao Qi Fan; Dong Feng Geng; Ren Sheng Shen; Ying Min Luo; Guo Tong Du
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-2313)
- Published
- 2010
- Language
- EN
- Field
- Materials Science (Physical Sciences)