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Extraction of Bulk Generation Lifetime and Surface Generation Velocity in High-resistivity Silicon by Means of Gated Diodes by G. Verzellesi; G.-F. Dalla Betta; M. Boscardin; G.U. Pignatel; L. Bosisio is a Physics and Astronomy article available to read on EtoBox.

What is Extraction of Bulk Generation Lifetime and Surface Generation Velocity in High-resistivity Silicon by Means of Gated Diodes about?

We show that the accuracy of the gated diode method for measuring bulk generation lifetime and surface generation velocity in high resistivity silicon depends critically on the gate length of the test device, as a result of nonidealities affecting the gated diode operation. Minimization of the surface generation velocity measurement error requires the gate length to be suitably decreased, while long gate length structures are needed for accurate bulk generation lifetime extraction.

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Author

G. Verzellesi; G.-F. Dalla Betta; M. Boscardin; G.U. Pignatel; L. Bosisio

Publisher

Elsevier Science; Elsevier ; Elsevier BV; ScienceOpen (ISSN 0168-9002)

Published

2002

Language

EN

Field

Physics and Astronomy (Physical Sciences)