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This study investigates the thermo-chemical oxidation of titanium to enhance the thickness of the TiO2 oxide layer, achieving over 100μm thickness through various oxidants and thermal treatments. The results indicate that oxide layer thickness increases linearly with temperature, reaching up to 150μm at 900°C, with significant changes in morphology and structure due to increased defects. The findings suggest that the modified Ti-TiO2-oxidant system can serve as a highly effective dielectric diode with stabl

Author

dostojic992

Language

EN