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About this Engineering article
Growth and characterization of small band gap (â1⁄40.6 eV) InGaAsN layers on InP by Gokhale, Milind R.; Wei, Jian; Wang, Hongsheng; Forrest, Stephen R. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Gokhale, Milind R.; Wei, Jian; Wang, Hongsheng; Forrest, Stephen R.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)
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