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About this Physics and Astronomy article
The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors by Lv, Yuanjie; Feng, Zhihong; Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Lv, Yuanjie; Feng, Zhihong; Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2014
- Field
- Physics and Astronomy (Physical Sciences)