Opening book details…
About this Engineering article
Improving the non-quasi-static weak-to-strong-inversion four-terminal MOSFET model by Bagheri, M. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Bagheri, M.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1987
- Language
- EN
- Field
- Engineering (Physical Sciences)