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Can I read Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding on EtoBox?
Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding by Z Hatzopoulos; D Cengher; G Deligeorgis; M Androulidaki; E Aperathitis; G Halkias; A Georgakilas is a Engineering article available to read on EtoBox.
What is Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding about?
Optimized MBE outgassing procedures eliminated Hillock-type oval defects, allowing the bonding of epitaxial GaAs/ AlGaAs wafers with Si wafers. The application of a single growth epitaxial structure for the fabrication of laser diode (LD) and photodetector (PD) devices was investigated. Four graded index separate confinement heterostructure-multiquantum well (GRINSCH-MQW) LD structures with 2, 4, 8 and 16 GaAs quantum wells (QWs) were used to evaluate quantitatively the effect of the number of QWs in the performance of LDs. Threshold current density values of 358 A/ cm 2 for 2 QWs, 484 A/cm 2 for 4 QWs, 685 A/cm 2 for 8 QWs and 1435 A/cm 2 for 16 QWs were measured. PDs were fabricated by five GRINSCH-MQW structures with 2-32 QWs and exhibited responsivity of 0.020 A/W for 2 QWs, 0.031 A/W for 4 QWs, 0.069 A/W for 8 QWs, 0.181 A/W for 16 QWs and 0.350 A/W for 32 QWs.
Who reads Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Z Hatzopoulos; D Cengher; G Deligeorgis; M Androulidaki; E Aperathitis; G Halkias; A Georgakilas
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2001
- Language
- EN
- Field
- Engineering (Physical Sciences)