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SiC MOSFETs: HTRB Test Insights by P. Hari Krishnan ECE-Research scholar is a document available to read on EtoBox.

What is SiC MOSFETs: HTRB Test Insights about?

This study investigates the reliability of silicon carbide (SiC) MOSFETs under High Temperature Reverse Bias (HTRB) stress using Capacitance-Voltage (C-V) characteristics. The results indicate that while advancements have been made in SiC technology, issues such as gate oxide degradation and increased on-state resistance remain significant challenges. The findings emphasize the need for further research into the physical mechanisms affecting SiC MOSFET performance in high-temperature applications.

Author

P. Hari Krishnan ECE-Research scholar

Language

EN