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Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing by F. Senocq; A. Turgambaeva; N. Prud’homme; U. Patil; V.V. Krisyuk; D. Samélor; A. Gleizes; C. Vahlas is a Engineering article available to read on EtoBox.
What is Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing about?
Decomposition of CpCuPEt 3 (Cp = NNN(η5-C 5 H 5 )) and MOCVD of Cu films from CpCuPEt 3 have been investigated in the frame of an ongoing project on the processing of Cu-containing coatings. The behaviour of CpCuPEt 3 vapours under heating conditions was studied by in situ mass spectrometry. It was established that this compound is monomeric in gas phase. Its decomposition mechanism on hot surface was proposed. From mass spectroscopy experiments, it was established that decomposition in vacuum begins at 150 °C with evolution of PEt 3 . Beyond 270 °C, formation of cyclopentadiene is observed, indicating that a change in decomposition mechanism occurs. The saturating vapour pressure of CpCuPEt 3 was estimated through static method, in order to optimize transport conditions and to control the molar fraction of the precursor in the gas phase. Finally, growth rate and microstructure of MOCVD processed Cu films from CpCuPEt 3 have been investigated.
Who reads Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- F. Senocq; A. Turgambaeva; N. Prud’homme; U. Patil; V.V. Krisyuk; D. Samélor; A. Gleizes; C. Vahlas
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)