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About this Engineering article
Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer by Tawara, Takeshi; Miyazawa, Tetsuya; Ryo, Mina; Miyazato, Masaki; Fujimoto, Takumi; Takenaka, Kensuke; Matsunaga, Shinichiro; Miyajima, Masaaki; Otsuki, Akihiro; Yonezawa, Yoshiyuki; Kato, Tomohisa; Okumura, Hajime; Kimoto, Tsunenobu; Tsuchida, Hidekazu is a Engineering article available to read on EtoBox.
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- Author
- Tawara, Takeshi; Miyazawa, Tetsuya; Ryo, Mina; Miyazato, Masaki; Fujimoto, Takumi; Takenaka, Kensuke; Matsunaga, Shinichiro; Miyajima, Masaaki; Otsuki, Akihiro; Yonezawa, Yoshiyuki; Kato, Tomohisa; Okumura, Hajime; Kimoto, Tsunenobu; Tsuchida, Hidekazu
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2017
- Field
- Engineering (Physical Sciences)