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This study presents a photonic synapse device utilizing hafnia-based oxide-semiconductor transistors that exhibit tunable synaptic functions through ferroelectric polarization. The device demonstrates controlled relaxation characteristics, enabling short-term plasticity, paired-pulse facilitation, and long-term plasticity, mimicking biological synaptic behavior. This advancement addresses the limitations of previous photonic synapses by allowing for enhanced control over relaxation properties, which is cruc

Author

chandreswar

Language

EN