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About this Engineering article
Analysis of Thin Oxide Growth Mechanisms in Partial-Pressure Rapid-Thermal Oxidation of Silicon by Y. Kotani; Y. Omura is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Y. Kotani; Y. Omura
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2000
- Field
- Engineering (Physical Sciences)