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FinFET, or Tri-Gate Transistor, is a 3D transistor design that enhances electrostatic control and reduces leakage compared to traditional planar FETs, leading to improved performance at smaller technology nodes. The fabrication process involves multiple steps including substrate preparation, fin etching, oxide deposition, and gate deposition, utilizing techniques like multiple patterning to achieve high-density features. Self-aligned quadruple patterning (SAQP) is highlighted as a key technology for achievi

Author

dopekannadiga69

Language

EN