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About this Engineering article
Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency by Shinohara, Keisuke; Yamashita, Yoshimi; Endoh, Akira; Hikosaka, Kohki; Matsui, Toshiaki; Mimura, Takashi; Hiyamizu, Satoshi is a Engineering article available to read on EtoBox.
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- Author
- Shinohara, Keisuke; Yamashita, Yoshimi; Endoh, Akira; Hikosaka, Kohki; Matsui, Toshiaki; Mimura, Takashi; Hiyamizu, Satoshi
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2002
- Field
- Engineering (Physical Sciences)