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About this Engineering article
Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1−xAs channel by Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 2006
- Field
- Engineering (Physical Sciences)