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About this Physics and Astronomy article
Gate pulse frequency-dependent kink effects in GaAs metal-semiconductor field-effect-transistors with a low-temperature-grown buffer layer by J. Haruyama; H. Negishi is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- J. Haruyama; H. Negishi
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1995
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)