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The AON6710 is an N-channel enhancement mode field effect transistor (FET) suitable for use as a low side FET in power supplies, load switching, and general applications. It uses advanced trench technology with an integrated Schottky diode to provide excellent resistance and low gate charge. Key features include a drain-source voltage rating of 30V, continuous drain current of 20A, and on-state resistance below 4.7mΩ at 10V gate voltage.

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Langlly
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EN

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