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Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure by Chuanju Wang; Xiaohang Li is a Materials Science article available to read on EtoBox.

What is Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure about?

The Al 2 O 3 /GaN heterostructure is a crucial component of GaN-based electronic and photonic devices, and the Al 2 O 3 /GaN interface quality plays an important role in determining the device performance. Here, using density functional theory, we confirmed that dipole formed at the Al 2 O 3 /GaN interface can be attributed to electron transfer and redistribution between Al 2 O 3 and GaN. The formation of dipole was confirmed by X-ray photoemission spectroscopy. The dipole induced electric field at the interfaces of the Al 2 O 3 /GaN heterostructures result in negative threshold voltage (V TH ) shifts of 2.3 and 1.2 V for the heterostructures without defects and with one Al interstitial (Al i ) defect, respectively. On the other hand, the Al i defect can induce positive charges, resulting in negative V TH shifts. Therefore, an improvement in the interface quality (i.e., by eliminating the Al i defect) does not necessarily result in positive V TH shifts. This study reveals novel electronic properties of the Al 2 O 3 / GaN heterostructure and offers a path toward the achievement of GaN-based devices with engineered features.

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Author

Chuanju Wang; Xiaohang Li

Publisher

Elsevier BV

Published

2023

Language

EN

Field

Materials Science (Physical Sciences)