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About this Engineering article
Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates by Mouloud Boudaa; P. Regreny; J. L. Leclercq; M. P. Besland; O. Marty; G. Hollinger is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Mouloud Boudaa; P. Regreny; J. L. Leclercq; M. P. Besland; O. Marty; G. Hollinger
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 2004
- Language
- EN
- Field
- Engineering (Physical Sciences)