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Magneto-electronics, Transport Properties, and Tuning Effects of Arsenene Armchair Nanotubes Doped with Transition Metal Atoms by Han, J N; Zhang, Zhenhua; Fan, Zhiqiang; zhou, R.L is a Materials Science article available to read on EtoBox.

What is Magneto-electronics, Transport Properties, and Tuning Effects of Arsenene Armchair Nanotubes Doped with Transition Metal Atoms about?

Recently, the arsenic monolayer has been successfully fabricated by micromechanical stripping. However, it is a non-magnetic semiconductor, including its derivatives. Here, we theoretically explore how to induce magnetism for arsenene armchair nanotubes (AsANTs) with a low-concentration TM (TM=Co, Y, Rh, Ni, Mo, Ru) atom doping, especially focusing on their structural stability, magneto-electronic property, carrier mobility, and the strain effects. The high stability of these doped tubes are confirmed by the calculated binding energy and formation energy as well as Forcite annealing molecular dynamics simulations. The AsANT can act as band-gap narrowed non-magnetic semiconductors or highly spin-polarized magnetic semiconductors (halfsemiconductor or bipolar magnetic semiconductor) depending on TM types, suggesting different promising applications, such as developing infrared photodetectors with broadband detectionin or spintronic devices. The magnetic thermal stability beyond the room temperature is predicted for doped tubes. Furthermore, the carrier mobility of AsANTs can be tuned into a wide region by TM doping, but it is enhanced in most of cases. The carrier polarity and spin p

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Author

Han, J N; Zhang, Zhenhua; Fan, Zhiqiang; zhou, R.L

Publisher

Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0957-4484)

Published

2020

Language

EN

Field

Materials Science (Physical Sciences)