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About this Engineering article
Microwave operation of high power InGaP/GaAs heterojunction bipolar transistors by Mack, M.P.; Bayraktaroglu, B.; Kehias, L.; Barrette, J.; Neidhard, R.; Fitch, R.; Scherer, R.; Davito, D.; West, W. is a Engineering article available to read on EtoBox.
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- Author
- Mack, M.P.; Bayraktaroglu, B.; Kehias, L.; Barrette, J.; Neidhard, R.; Fitch, R.; Scherer, R.; Davito, D.; West, W.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 1993
- Field
- Engineering (Physical Sciences)