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Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers by Mitsuo Yamaga; Kevin P. O'Donnell; Hiroto Sekiguchi; Akihiro Wakahara is a Materials Science article available to read on EtoBox.

What is Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers about?

Gallium nitride active layers co-doped in situ with magnesium and europium, GaN(Mg):Eu, show strong red photoluminescence (PL), promising for red light emitting diode (LED) application (Eu@621 nm). Polarized PL lines excited by either above or below band-gap energy for the GaN(Mg):Eu layers are assigned to the 5D0 → 7F J (J = 0, 1, 2) transitions lines from several Eu centers with C 3v symmetry, which consist of single line, double lines and triple lines related to splitting of 7F J (J = 0, 1, 2) by the C 3v crystal-field, respectively. Cascade luminescence line-pattern of the 5D1 → 7F J (J = 0, 1, 2) transitions is a complete replica of the PL line-pattern and gives evidence of the correct assignment of the polarized PL lines. Crystal-field splitting and Zeeman splitting of the PL lines have been analysed using the C 3v crystal-field equivalent operator Hamiltonian. Structural Eu models with the C 3v symmetry have been proposed on the basis of the analysis: the dominant Eu center is an Eu complex with defect-free perfect surrounding: the minor Eu centers are Eu complexes accompanied by nitrogen vacancies with different charge states on the c-axis in the closest vicinity of Eu. An

Who reads Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers?

Author

Mitsuo Yamaga; Kevin P. O'Donnell; Hiroto Sekiguchi; Akihiro Wakahara

Publisher

Elsevier BV

Published

2023

Language

EN

Field

Materials Science (Physical Sciences)